Статус та структура Інтерполу. Система органів міжнародної організації кримінальної поліції, їх функції та специфіка професійної діяльності

(uk) У статті проаналізовано систему органів Інтерполу, досліджено структуру Генерального Секретаріату та Комісії з контролю за файлами МОКП, висвітлено функції та специфіку професійної діяльності працівників цієї організації.(ru) В статье проанализирована система органов Интерпола, исследована структура Генерального Секретариата и Комиссии по контролю файлов МОУП, освещены функции и специфіка профессиональной деятельности работников этой организации.(en) The publication analyzed the system of Interpol' studies of the General Secretariat and the Commission for the Control of INTERPOL's Files, highlight the function and specificity of the professional activities of employees of the organization

Порівняльний аналіз зовнішньоекономічної функції Російської Федерації

Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow fullwidth at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSEgrown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.On the day of the defence date the status of this article was: Manuscript.Original Publication:Muhammad Junaid, Ching-Lien Hsiao, Justinas Palisaitis, Jens Jensen, Per Persson, Lars Hultman and Jens Birch, Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target, 2011, Applied Physics Letters, (98), 14, 141915.http://dx.doi.org/10.1063/1.3576912Copyright: American Institute of Physicshttp://www.aip.org

American Military Culture and Civil-Military Relations Today

We demonstrate a standard-free method to retrieve compositional information in AlxIn1-xN thin films by measuring the bulk plasmon energy (E-p), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two series of samples were grown by magnetron sputter epitaxy (MSE) and metal organic vapor phase epitaxy (MOVPE), which together cover the full compositional range 0 <= x <= 1. Complementary compositional measurements were obtained using Rutherford backscattering spectroscopy (RBS) and the lattice parameters were obtained by X-ray diffraction (XRD). It is shown that E-p follows a linear relation with respect to composition and lattice parameter between the alloying elements from AlN to InN allowing for straightforward compositional analysis. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

Інтеграція знань з астрономії та фізики щодо уявлень про приливи та відливи

(uk) В статті розкриті окремі гравітаційні, енергетичні та екологічні особливості припливів та відливів, які у підручниках для середніх загальноосвітніх навчальних закладів та вищої школи мало висвітлені. Автором якісну картину припливів та відпливів доповнено кількісною.(en) The article revealed specific gravity, energy and environmental features tides and low tides that textbooks for secondary schools and higher education was highlighted. The author of picture quality tides supplemented with quantitative

Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition

Gallium nitride (GaN) is the main component of modern-day high electron mobility transistors due to its favorable electronic properties. As electronic devices become smaller with more complex surface architecture, the ability to deposit high-quality GaN films at low temperatures is required. Herein, we report a new highly volatile Ga(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial GaN by atomic layer deposition (ALD). This new Ga(III) triazenide, the first hexacoordinated Ga-N bonded precursor used in a vapor deposition process, was easily synthesized and purified by either sublimation or recrystallisation. Thermogravimetric analysis showed single-step volatilization with an onset temperature of 155 degrees C and negligible residual mass. Three temperature intervals with self-limiting growth were observed when depositing GaN films. The GaN films grown in the second growth interval at 350 degrees C were epitaxial on 4H-SiC without an AlN seed layer and found to have a near stoichiometric Ga/N ratio with very low levels of impurities. In addition, electron microstructure analysis showed a smooth film surface and a sharp interface between the substrate and film. The band gap of these films was 3.41 eV with the Fermi level at 1.90 eV, showing that the GaN films were unintentionally n-type-doped. This new triazenide precursor enables ALD of GaN for semiconductor applications and provides a new Ga(III) precursor for future deposition processes

Chemical-scissor-mediated structural editing of layered transition metal carbides

Intercalation of non-van der Waals (vdW) layered materials can produce new 2D and 3D materials with unique properties, but it is difficult to achieve. Here, we describe a structural editing protocol for 3D non-vdW layered ternary carbides and nitrides (MAX phases) and their 2D vdW derivatives (MXenes). Gap-opening and species-intercalating stages were mediated by chemical scissors and guest intercalants, creating a large family of layered materials with unconventional elements and structures in MAX phases, as well as MXenes with versatile termination species. Removal of surface terminations by metal scissors and stitching of carbide layers by metal atoms leads to a reverse transformation from MXenes to MAX phases, and metal-intercalated 2D carbides. This scissor-mediated structural editing may enable structural and chemical tailoring of other layered ceramics

Freuden ondorioak: psikoanalisia eta egungo zientziaren diskurtsoa

Hydrogen permeation membranes are a key element in improving the energy conversion efficiency and decreasing the greenhouse gas emissions from energy generation. The scientific community faces the challenge of identifying and optimizing stable and effective ceramic materials for H2 separation membranes at elevated temperature (400–800 °C) for industrial separations and intensified catalytic reactors. As such, composite materials with nominal composition BaCe0.8Eu0.2O3-δ:Ce0.8Y0.2O2-δ revealed unprecedented H2 permeation levels of 0.4 to 0.61 mL·min−1·cm−2 at 700 °C measured on 500 μm-thick-specimen. A detailed structural and phase study revealed single phase perovskite and fluorite starting materials synthesized via the conventional ceramic route. Strong tendency of Eu to migrate from the perovskite to the fluorite phase was observed at sintering temperature, leading to significant Eu depletion of the proton conducing BaCe0.8Eu0.2O3-δ phase. Composite microstructure was examined prior and after a variety of functional tests, including electrical conductivity, H2-permeation and stability in CO2 containing atmospheres at elevated temperatures, revealing stable material without morphological and structural changes, with segregation-free interfaces and no further diffusive effects between the constituting phases. In this context, dual phase material based on BaCe0.8Eu0.2O3-δ:Ce0.8Y0.2O2-δ represents a very promising candidate for H2 separating membrane in energy- and environmentally-related applications